bay135 www.vishay.com vishay semiconductors rev. 1.8, 02-aug-12 1 document number: 85552 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diode, high voltage mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10k per 13" reel (52 mm tape), 50k/box tap/10k per ammopack (52 mm tape), 50k/box features ? silicon planar diode ? very low reverse current ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? protection circuits, delay circuits parts table part ordering code type markin g internal construction remarks bay135 bay135-tr or bay135-tap bay135 si ngle diode tape an d reel/ammopack absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit repetitive peak reverse voltage v rrm 140 v reverse voltage v r 125 v peak forward surge current t p = 1 s i fsm 2a average forward current f = 50 hz i f(av) 200 ma thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
bay135 www.vishay.com vishay semiconductors rev. 1.8, 02-aug-12 2 document number: 85552 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage package dimensions in millimeters (inches): do-35 electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 30 ma v f 1000 mv reverse current e ? 300 ix, v r i r 3na e ? 300 ix, v r , t j = 125 c i r 0.5 a e ? 300 ix, v r = 60 v i r 1na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms v (br) 140 v diode capacitance v r = 0 v, f = 1 mhz, c d 5pf 04 08 0 120 160 1 10 100 1000 10 000 i- re v erse c u rrent (na) r t j - j u nction temperat u re (c) 200 94 9079 scattering limit v r = v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i- for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 94 9078 scattering limit t j =2 5 c 94 9366 re v . 6 - date: 19. december 2011 doc u ment no.: sb- v -3906.04-031(4) 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] cathode identification 1.7 [0.067] 1.3 [0.050] 3.1 min. [0.120] ? 0.6 max. [0.024] ? 0.4 min. [0.015]
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